佐藤 勝 Sato Masaru
研究者情報
| 職名 | 准教授 |
| 所属 | 機械電気系 |
学位・学歴・職歴
学位
| 博士（工学） | LSIにおける最先端Cu配線へ適用可能なナノ結晶バリヤ膜の作製方法に関する研究 | 2012 |
担当科目・専門分野等
- 担当授業科目（学部）
- エレクトロニクス基礎 ｴﾈﾙｷﾞｰ総合, 電子デバイス ｴﾈﾙｷﾞｰ総合, 電気エネルギー応用 ｴﾈﾙｷﾞｰ総合, エネルギー工学実験II ｴﾈﾙｷﾞｰ総合
- 専門分野
- 電子材料工学, 薄膜工学, 半導体プロセス工学
- 研究テーマ
- 3次元LSIにおける材料開発に関する研究, オホーツク特産品の有効活用に関する研究
- 所属学会
- 電子情報通信学会, 応用物理学会
学術論文等
学術論文
| 論文名／掲載誌名等 | 掲載年月 | |
|---|---|---|
Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
Japanese Journal of Applied Physics, 45, 9172-9179
|
2006-12 | |
Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC
Japanese Journal of Applied Physics, 47, 620-624
|
 |
2008-01 |
Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
Japanese Journal of Applied Physics, 49, 05FA06(4pages)
|
|
2010-05 |
Barrier Properties of Thin ZrNx Films Prepared by Radical-Assisted Surface Reaction
Japanese Journal of Applied Physics, 50, 05EA07(2pages)
|
2011-05 | |
Atomic Layer Deposition of Thin VNx Film from Tetrakis (diethylamido)vanadium Precursor
Japanese Journal of Applied Physics, 50, 05EA06(2pages)
|
2011-05 | |
ナノ結晶組織を有する薄いHfNx膜のCuに対する拡散バリヤ特性
電子情報通信学会論文誌C, J97-C, 46
|
2014-01 | |
Preparation of nanocrystalline HfNx films as a thin barrier for through-Si via interconnects in three-dimensional integration
Japanese Journal of Applied Physics, 53, 02BC05
|
|
2014-02 |
Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
Japanese Journal of Applied Physics, 53, 02BC04
|
2014-02 | |
Characterization of silicon nitride thin films deposited by reactive sputtering and plasma enhanced CVD at low temperatures
Jpn. J. Appl. Phys., 53, 05GE01
|
|
2014-04 |
Thermally stable ZrN/Zr3N4 bilayered barrier system for through-Si-via process
Japanese Journal of Applied Physics, 54, 5S, 05EE02-1
|
|
2015-05 |
3D/2.5D-IC TSVに向けた低温成膜SiNxの特性評価
電気学会論文誌C（電子・情報・システム部門誌）, 135, 7, 733
|
|
2015-07 |
TSVプロセスに適用可能な反応性スパッタ法を用いたSiNx膜の低温作製
電気学会論文誌C(電子・情報・システム部門誌), 135, 7, 728
|
|
2015-07 |
Room-temperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI
Japanese Journal of Applied Physics, 55, 2S, 02BC21-1
|
|
2016-02 |
Barrier properties of ultrathin VN films of low resistivity and high density for Cu interconnects
Japanese Journal of Applied Physics, 55, 2S, 02BC10-1
|
|
2016-02 |
Preparation of ultrathin TiNx films by radical assisted low temperature deposition and their barrier properties against Cu diffusion
Vacuum, 126, 10
|
|
2016-04 |
Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics
Japanese Journal of Applied Physics, 55, 04EC05
|
|
2016-04 |
Growth of <111>-oriented Cu layer on thin TaWN films
Japanese Journal of Applied Physics, 56, 07KC03
|
|
2017-06 |
Relationship between TiN films with different orientations and their barrier properties
Japanese Journal of Applied Physics, 57, 07MB01
|
|
2018-06 |
Cole-Cole Plotを用いたエゾシカ肉の評価
電気学会論文誌C（電子・情報・システム部門誌）, 138, 906
|
|
2018-07 |
Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy
Japanese Journal of Applied Physics, 58, SBBC02
|
|
2019-04 |
Characterization of TiN films sputter-deposited at low temperatures for Cu-through-silicon via
Japanese Journal of Applied Physics, 58, SBBC03
|
|
2019-04 |
Cu(111) preferential orientation on thin HfN film as a diffusion barrier
Japanese Journal of Applied Physics, 58, SHHA01
|
|
2019-07 |
生体電気インピーダンス法によるエゾシカ肉の鮮度評価
電気学会論文誌C（電子・情報・システム部門誌）, 139, 7, 812
|
|
2019-07 |
XRD and EBSD analysis of Cu film on randomly oriented ZrNx film as the underlying materials
Japanese Journal of Applied Physics, 59, SLLD01-1
|
|
2020-04 |
エゾシカ肉のおいしさのリアルタイム計測
電子情報通信学会論文誌C, J103-C, 384-394
|
2020-09 | |
Structural analysis of TaWN ternary alloy film applicable to Cu orientation control
Japanese Journal of Applied Physics, 60, SBBC04
|
|
2021-03 |
Al(111) orientation and thermal stability of the system using Al3Nb thin film
Japanese Journal of Applied Physics, 61, SC1088-1
|
|
2022-05 |
日本酒の保存方法に関する電気的特性評価
電気学会論文誌C（電子・情報・システム部門誌）, 142, 7, 735
|
|
2022-07 |
Room-temperature deposition of nitride barrier by radical-assisted surface
reaction in LSI and/or 3D-LSI metallization
Japanese Journal of Applied Physics, 61, SJ0802-1
|
|
2022-08 |
Fundamental evaluation of orientation and grain size of Cu film in Cu/TaWN/SiO2/Si system
Japanese Journal of Applied Physics, 62, SH8003
|
|
2023-06 |
水耕栽培によるベンサミアナタバコの基礎的な栽培方法の検討
電子情報通信学会論文誌C
|
|
2023-12 |
多段式栽培を想定したベンサミアナタバコの水耕栽培方法および電気照射の効果
電気学会論文誌C, 144, 679
|
|
2024-07 |
多段式栽培を想定したベンサミアナタバコの水耕栽培方法および電気照射の効果
電気学会論文誌C（電子・情報・システム部門誌）, 144, 7, 679
|
|
2024-07 |
生体電気インピーダンス法によるエゾシカ肉の肉質評価
電子情報通信学会論文誌C, J108-C, 1
|
|
2024-12 |
生体電気インピーダンス法によるエゾシカ肉の肉質評価
電子情報通信学会論文誌C, J108-C, 4, 80
|
|
2025-04 |
国際会議発表論文
| 発表題名 | 発行年月 |
|---|---|
Preparation conditions of nano-crystalline ZrNx films by reactive sputtering
Advanced Metallization Conference 2012 : Asian Session, The Japan Society of Applied Physics, 東京
|
2012-10 |
Preparation of nanocrystalline HfNx films as a thin barrier for through Si via interconnects
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
|
2013-06 |
Characterization of TiHfN nitride composite films as a barrier between Cu plug and Si
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
|
2013-06 |
Characterization of SiNx film as insulating barrier applicable to TSV
Advanced Metallization Conference 2013 : Asian Session, The Japan Society of Applied Physics, 東京
|
2013-10 |
Thermal stability of bi-layered ZrN/Zr3N4 barrier in Cu/Si contact system
Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, Jpn. J. Appl. Phys., Tokyo
|
2014-10 |
Thermally and Structurally Stable Thin VN Barrier
for Cu Interconnects
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics
, Niigata
|
2015-06 |
Barrier Properties of HfNx Thin Films Formed
by Radical-Assisted Surface Reaction
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics, Niigata
|
2015-06 |
Preparation of high performance SiNx films deposited by reactive sputtering and PECVD at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Sapporo
|
2015-09 |
The effect of the HfNx barrier thickness on the Cu grain orientation control
Solid State Devices and Materials, The Japan Society of Applied Physics, Tsukuba
|
2016-09 |
Barrier properties of TiHfN ternary alloy films against Cu diffusion in Cu/Si contact system
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2016-10 |
Cu grain orientation control on thin TaWN ternary alloy barrier
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2016-10 |
Characterization of TiHfN ternary alloy films as a new barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, Sendai
|
2017-09 |
Relation between TiN films with different texture and its barrier properties
Advanced Metallization Conference 2017 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2017-10 |
Control of Cu(111) orientation on TaWN alloy barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
|
2018-09 |
Preparation of ZrOxNy film at low temperatures by reactive sputtering assisted by hot-wire
HWCVD10 Conference, The Japan Society of Applied Physics, Kitakyushu
|
2018-09 |
Characterization of TiN films sputter-deposited at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
|
2018-09 |
Mapping of Ni/SiNx/n-SiC Structure Using Scanning Internal Photoemission Microscopy
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
|
2018-09 |
Cu(111) preferential orientation on thin HfNX films
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
|
2018-10 |
Preferential orientation of Cu(111) with large grain sizes on thin TiHfN barrier
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
|
2018-10 |
固体の電気インピーダンス解析 ～エゾシカ肉の生体測定～
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
|
2018-11 |
薄いHfNx膜上でのCu膜の配向性評価
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
|
2018-11 |
極薄TaWNバリヤ上のCu(111)配向制御
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
|
2018-11 |
Properties of barrierless Cu/ZrNx/Si structure deposited at room temperature
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
|
2019-09 |
Cu(111) preferential orientation on ZrNx films
Advanced Metallization Conference Plus 2019, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Formation of chemically inert interface between Al and Al3Nb thin films
Advanced Metallization Conference Plus 2019 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Cu(111) orientation control on thin TaWN alloy barrier
Advanced Metallization Conference Plus 2019 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Preparation of reactively sputtered ZrO2 films at low temperatures
International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics
|
2020-09 |
Low-temperature deposited SiNx films for TSV in 3D-LSI
International Conference on Solid State Devices and Materials, Japanese Journal of Applied Physics
|
2021-09 |
Preparation of Zr/ZrOx/Pt structure for forming free resistive random access memory
International Conference on Solid State Devices and Materials, Japanese Journal of Applied Physics
|
2021-09 |
Application of Al3Nb thin films for Al(111) orientation control
International Conference on Solid State Devices and Materials, Japanese Journal of Applied Physics
|
2021-09 |
講演発表
| 発表題名 | 発表年月 |
|---|---|
新規熟成法によるエゾ鹿肉のおいしさ測定
電子情報通信学会北海道支部, 北海道
|
2020-02 |
電気的特性を用いた植物モニタリング
電子情報通信学会電子部品材料研究会, 札幌
|
2024-05 |
電気照射条件によるエゾシカ肉の熟成への影響
電子情報通信学会 電子部品・材料研究会, 網走
|
2024-07 |
低温成膜したSiOx膜の特性に及ぼすスパッタ電力の影響
電子情報通信学会電子部品材料研究会, 長野
|
2024-10 |
日本酒の電気的特性に及ぼす糖度や酸度の影響についての検討
IEICE北海道支部学生会インターネットシンポジウム
|
2025-02 |
ZrO2添加が歯科用アクリルレジンに与える影響
電子情報通信学会 電子部品・材料研究会, 小樽
|
2025-08 |
科学研究費
| 研究課題・他 | 取得年月 |
|---|---|
3D及び2.5D-ICに適用可能なバリヤレス絶縁膜の低温作製
|
|
極微細TSVのための界面層フリーな新規バリヤ材料の開発
|
|
最先端3次元デバイス及び3D-LSIに適用可能なCu配線における革新的配向制御
|
|
極微細TSVのための界面層フリーな新規バリヤ材料の開発
|
|
最先端3次元デバイス及び3D-LSIに適用可能なCu配線における革新的配向制御
|
|
最先端3次元デバイス及び3D-LSIに適用可能なCu配線における革新的配向制御
|
|
極薄バリヤの構造解析における革新的解明とCu配線の配向制御
|
|
極薄バリヤの構造解析における革新的解明とCu配線の配向制御
|
|
次世代3次元LSIのための低消費電力を可能とする高機能裏面配線構造の検討
|
|
次世代3次元LSIのための低消費電力を可能とする高機能裏面配線構造の検討
|
|
次世代3次元LSIのための低消費電力を可能とする高機能裏面配線構造の検討
|
受賞
| 2007.03 | 応用物理学会北海道支部学術発表奨励賞 |
| 2007.11 | 平成19年度電気・情報関係学会北海道支部連合大会優秀論文発表賞 |
| 2016.9 | 平成27年度電気学会論文誌C部門(電子・情報・システム部門)誌論文奨励賞 |
社会活動
| 2016.7~ | Catalytic-Chemical Vapor Deposition (Cat-CVD)研究会委員 |
| 2017.9~ | Hot-Wire Chemical Vapor Deposition (HWCVD)国際会議プログラム委員 |
| 2020.4~ | 日本学術振興会 R025 先進薄膜界面機能創成委員 |
| 2020.6~ | 電子情報通信学会北海道支部支部委員 |
| 2021.6~ | 電子情報通信学会 電子部品・材料研究専門委員会委員 |
| 2025.4～ | 日本学術振興会R071革新的薄膜界面委員会委員 |