佐藤 勝 Sato Masaru

研究者情報
職名 助教
所属 地球環境工学科 - エネルギー総合工学コース
学位・学歴・職歴

学位

博士(工学) LSIにおける最先端Cu配線へ適用可能なナノ結晶バリヤ膜の作製方法に関する研究 2012
担当科目・専門分野等
担当授業科目(学部)
オホーツク地域と環境 地球環境, エネルギー工学実験I エネルギー総合, 電子情報通信工学実験I 電気, 電子情報通信工学実験II 電気, 電気電子工学基礎実験II 電気再履修用(H28入学以前), 地球環境工学入門
専門分野
電子材料工学, 薄膜工学, 半導体プロセス工学
研究テーマ
3次元LSIにおける材料開発に関する研究, オホーツク特産品の有効活用に関する研究
所属学会
電子情報通信学会, 応用物理学会
学術論文等

学術論文

論文名/掲載誌名等   掲載年月
Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
Japanese Journal of Applied Physics, 45, 9172-9179
2006-12
Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC
Japanese Journal of Applied Physics, 47, 620-624
2008-01
Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
Japanese Journal of Applied Physics, 49, 05FA06(4pages)
2010-05
Atomic Layer Deposition of Thin VNx Film from Tetrakis (diethylamido)vanadium Precursor
Japanese Journal of Applied Physics, 50, 05EA06(2pages)
2011-05
Barrier Properties of Thin ZrNx Films Prepared by Radical-Assisted Surface Reaction
Japanese Journal of Applied Physics, 50, 05EA07(2pages)
2011-05
ナノ結晶組織を有する薄いHfNx膜のCuに対する拡散バリヤ特性
電子情報通信学会論文誌C, J97-C, 46
2014-01
Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
Japanese Journal of Applied Physics, 53, 02BC04
2014-02
Preparation of nanocrystalline HfNx films as a thin barrier for through-Si via interconnects in three-dimensional integration
Japanese Journal of Applied Physics, 53, 02BC05
2014-02
Characterization of silicon nitride thin films deposited by reactive sputtering and plasma enhanced CVD at low temperatures
Jpn. J. Appl. Phys., 53, 05GE01
2014-04
Thermally stable ZrN/Zr3N4 bilayered barrier system for through-Si-via process
Japanese Journal of Applied Physics, 54, 5S, 05EE02-1
2015-05
3D/2.5D-IC TSVに向けた低温成膜SiNxの特性評価
電気学会論文誌C(電子・情報・システム部門誌), 135, 7, 733
2015-07
TSVプロセスに適用可能な反応性スパッタ法を用いたSiNx膜の低温作製
電気学会論文誌C(電子・情報・システム部門誌), 135, 7, 728
2015-07
Barrier properties of ultrathin VN films of low resistivity and high density for Cu interconnects
Japanese Journal of Applied Physics, 55, 2S, 02BC10-1
2016-02
Room-temperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI
Japanese Journal of Applied Physics, 55, 2S, 02BC21-1
2016-02
Preparation of ultrathin TiNx films by radical assisted low temperature deposition and their barrier properties against Cu diffusion
Vacuum, 126, 10
2016-04
Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics
Japanese Journal of Applied Physics, 55, 04EC05
2016-04
Growth of <111>-oriented Cu layer on thin TaWN films
Japanese Journal of Applied Physics, 56, 07KC03
2017-06
Relationship between TiN films with different orientations and their barrier properties
Japanese Journal of Applied Physics, 57, 07MB01
2018-06
Cole-Cole Plotを用いたエゾシカ肉の評価
電気学会論文誌C(電子・情報・システム部門誌), 138, 906
2018-07

国際会議発表論文

発表題名 発行年月
Preparation conditions of nano-crystalline ZrNx films by reactive sputtering
Advanced Metallization Conference 2012 : Asian Session, The Japan Society of Applied Physics, 東京
2012-10
Characterization of TiHfN nitride composite films as a barrier between Cu plug and Si
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
2013-06
Preparation of nanocrystalline HfNx films as a thin barrier for through Si via interconnects
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
2013-06
Characterization of SiNx film as insulating barrier applicable to TSV
Advanced Metallization Conference 2013 : Asian Session, The Japan Society of Applied Physics, 東京
2013-10
Thermal stability of bi-layered ZrN/Zr3N4 barrier in Cu/Si contact system
Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, Jpn. J. Appl. Phys., Tokyo
2014-10
Thermally and Structurally Stable Thin VN Barrier for Cu Interconnects
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics , Niigata
2015-06
Barrier Properties of HfNx Thin Films Formed by Radical-Assisted Surface Reaction
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics, Niigata
2015-06
Preparation of high performance SiNx films deposited by reactive sputtering and PECVD at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Sapporo
2015-09
The effect of the HfNx barrier thickness on the Cu grain orientation control
Solid State Devices and Materials, The Japan Society of Applied Physics, Tsukuba
2016-09
Barrier properties of TiHfN ternary alloy films against Cu diffusion in Cu/Si contact system
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
2016-10
Cu grain orientation control on thin TaWN ternary alloy barrier
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
2016-10
Characterization of TiHfN ternary alloy films as a new barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, Sendai
2017-09
Relation between TiN films with different texture and its barrier properties
Advanced Metallization Conference 2017 : Asian Session, The Japan Society of Applied Physics, Tokyo
2017-10
Preparation of ZrOxNy film at low temperatures by reactive sputtering assisted by hot-wire
HWCVD10 Conference, The Japan Society of Applied Physics, Kitakyushu
2018-09
Characterization of TiN films sputter-deposited at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
2018-09
Control of Cu(111) orientation on TaWN alloy barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
2018-09
Mapping of Ni/SiNx/n-SiC Structure Using Scanning Internal Photoemission Microscopy
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
2018-09
Preferential orientation of Cu(111) with large grain sizes on thin TiHfN barrier
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
2018-10
Cu(111) preferential orientation on thin HfNX films
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
2018-10
薄いHfNx膜上でのCu膜の配向性評価
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
2018-11
固体の電気インピーダンス解析 ~エゾシカ肉の生体測定~
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
2018-11
極薄TaWNバリヤ上のCu(111)配向制御
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
2018-11
科学研究費
研究課題・他 取得年月
3D及び2.5D-ICに適用可能なバリヤレス絶縁膜の低温作製
極微細TSVのための界面層フリーな新規バリヤ材料の開発
最先端3次元デバイス及び3D-LSIに適用可能なCu配線における革新的配向制御
受賞
2007.03 応用物理学会北海道支部学術発表奨励賞
2007.11 平成19年度電気・情報関係学会北海道支部連合大会優秀論文発表賞
2016.9 平成27年度電気学会論文誌C部門(電子・情報・システム部門)誌論文奨励賞
社会活動
2016.7~ Catalytic-Chemical Vapor Deposition (Cat-CVD)研究会委員
2017.9~ Hot-Wire Chemical Vapor Deposition (HWCVD)国際会議プログラム委員