Masaru Sato

Personal Information
Title Associate Professor
Department/Center School of Earth, Energy and Environmental Engineering - Applied Energy Course
Publication (Academic Papers)

Scientific Papers

Title / Publisher   Publish Date
Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
Japanese Journal of Applied Physics, 45, 9172-9179
2006-12
Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC
Japanese Journal of Applied Physics, 47, 620-624
2008-01
Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
Japanese Journal of Applied Physics, 49, 05FA06(4pages)
2010-05
Atomic Layer Deposition of Thin VNx Film from Tetrakis (diethylamido)vanadium Precursor
Japanese Journal of Applied Physics, 50, 05EA06(2pages)
2011-05
Barrier Properties of Thin ZrNx Films Prepared by Radical-Assisted Surface Reaction
Japanese Journal of Applied Physics, 50, 05EA07(2pages)
2011-05
Preparation of nanocrystalline HfNx films as a thin barrier for through-Si via interconnects in three-dimensional integration
Japanese Journal of Applied Physics, 53, 02BC05
2014-02
Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
Japanese Journal of Applied Physics, 53, 02BC04
2014-02
Characterization of silicon nitride thin films deposited by reactive sputtering and plasma enhanced CVD at low temperatures
Jpn. J. Appl. Phys., 53, 05GE01
2014-04
Thermally stable ZrN/Zr3N4 bilayered barrier system for through-Si-via process
Japanese Journal of Applied Physics, 54, 5S, 05EE02-1
2015-05
Characterization of low temperature SiNx films for 3D/2.5-IC TSV
IEEJ Transactions on Electronics, Information and Systems, 135, 7, 733
2015-07
Low-temperature deposition of reactively-sputtered SiNx films applicable to TSV process
IEEJ Transactions on Electronics, Information and Systems, 135, 7, 728
2015-07
Barrier properties of ultrathin VN films of low resistivity and high density for Cu interconnects
Japanese Journal of Applied Physics, 55, 2S, 02BC10-1
2016-02
Room-temperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI
Japanese Journal of Applied Physics, 55, 2S, 02BC21-1
2016-02
Preparation of ultrathin TiNx films by radical assisted low temperature deposition and their barrier properties against Cu diffusion
Vacuum, 126, 10
2016-04
Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics
Japanese Journal of Applied Physics, 55, 04EC05
2016-04
Growth of <111>-oriented Cu layer on thin TaWN films
Japanese Journal of Applied Physics, 56, 07KC03
2017-06
Relationship between TiN films with different orientations and their barrier properties
Japanese Journal of Applied Physics, 57, 07MB01
2018-06
Characterization of TiN films sputter-deposited at low temperatures for Cu-through-silicon via
Japanese Journal of Applied Physics, 58, SBBC03
2019-04
Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy
Japanese Journal of Applied Physics, 58, SBBC02
2019-04
Cu(111) preferential orientation on thin HfN film as a diffusion barrier
Japanese Journal of Applied Physics, 58, SHHA01
2019-07

International Conference Papers / Proceedings

Title Publish Date
Preparation conditions of nano-crystalline ZrNx films by reactive sputtering
Advanced Metallization Conference 2012 : Asian Session, The Japan Society of Applied Physics, 東京
2012-10
Preparation of nanocrystalline HfNx films as a thin barrier for through Si via interconnects
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
2013-06
Characterization of TiHfN nitride composite films as a barrier between Cu plug and Si
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
2013-06
Characterization of SiNx film as insulating barrier applicable to TSV
Advanced Metallization Conference 2013 : Asian Session, The Japan Society of Applied Physics, 東京
2013-10
Thermal stability of bi-layered ZrN/Zr3N4 barrier in Cu/Si contact system
Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, Jpn. J. Appl. Phys., Tokyo
2014-10
Thermally and Structurally Stable Thin VN Barrier for Cu Interconnects
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics , Niigata
2015-06
Barrier Properties of HfNx Thin Films Formed by Radical-Assisted Surface Reaction
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics, Niigata
2015-06
Preparation of high performance SiNx films deposited by reactive sputtering and PECVD at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Sapporo
2015-09
The effect of the HfNx barrier thickness on the Cu grain orientation control
Solid State Devices and Materials, The Japan Society of Applied Physics, Tsukuba
2016-09
Barrier properties of TiHfN ternary alloy films against Cu diffusion in Cu/Si contact system
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
2016-10
Cu grain orientation control on thin TaWN ternary alloy barrier
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
2016-10
Characterization of TiHfN ternary alloy films as a new barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, Sendai
2017-09
Relation between TiN films with different texture and its barrier properties
Advanced Metallization Conference 2017 : Asian Session, The Japan Society of Applied Physics, Tokyo
2017-10
Preparation of ZrOxNy film at low temperatures by reactive sputtering assisted by hot-wire
HWCVD10 Conference, The Japan Society of Applied Physics, Kitakyushu
2018-09
Characterization of TiN films sputter-deposited at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
2018-09
Control of Cu(111) orientation on TaWN alloy barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
2018-09
Mapping of Ni/SiNx/n-SiC Structure Using Scanning Internal Photoemission Microscopy
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
2018-09
Cu(111) preferential orientation on thin HfNX films
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
2018-10
Preferential orientation of Cu(111) with large grain sizes on thin TiHfN barrier
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
2018-10
固体の電気インピーダンス解析 ~エゾシカ肉の生体測定~
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
2018-11
薄いHfNx膜上でのCu膜の配向性評価
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
2018-11
極薄TaWNバリヤ上のCu(111)配向制御
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
2018-11
Properties of barrierless Cu/ZrNx/Si structure deposited at room temperature
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
2019-09
Cu(111) preferential orientation on ZrNx films
Advanced Metallization Conference Plus 2019, The Japan Society of Applied Physics, Tokyo
2019-10
Formation of chemically inert interface between Al and Al3Nb thin films
Advanced Metallization Conference Plus 2019 : Asian Session, The Japan Society of Applied Physics, Tokyo
2019-10
Cu(111) orientation control on thin TaWN alloy barrier
Advanced Metallization Conference Plus 2019 : Asian Session, The Japan Society of Applied Physics, Tokyo
2019-10
Preparation of reactively sputtered ZrO2 films at low temperatures
International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics
2020-09