Masaru Sato
Personal Information
| Title | Associate Professor |
| Department/Center | School of Earth, Energy and Environmental Engineering - Applied Energy Course |
Publication (Academic Papers)
Scientific Papers
| Title / Publisher | Publish Date | |
|---|---|---|
Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
Japanese Journal of Applied Physics, 45, 9172-9179
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2006-12 | |
Application of Extremely Thin ZrN Film as Diffusion Barrier between Cu and SiOC
Japanese Journal of Applied Physics, 47, 620-624
|
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2008-01 |
Reactively Sputtered Nanocrystalline ZrN Film as Extremely Thin Diffusion Barrier between Cu and SiO2
Japanese Journal of Applied Physics, 49, 05FA06(4pages)
|
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2010-05 |
Atomic Layer Deposition of Thin VNx Film from Tetrakis (diethylamido)vanadium Precursor
Japanese Journal of Applied Physics, 50, 05EA06(2pages)
|
2011-05 | |
Barrier Properties of Thin ZrNx Films Prepared by Radical-Assisted Surface Reaction
Japanese Journal of Applied Physics, 50, 05EA07(2pages)
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2011-05 | |
Preparation of nanocrystalline HfNx films as a thin barrier for through-Si via interconnects in three-dimensional integration
Japanese Journal of Applied Physics, 53, 02BC05
|
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2014-02 |
Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
Japanese Journal of Applied Physics, 53, 02BC04
|
2014-02 | |
Characterization of silicon nitride thin films deposited by reactive sputtering and plasma enhanced CVD at low temperatures
Jpn. J. Appl. Phys., 53, 05GE01
|
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2014-04 |
Thermally stable ZrN/Zr3N4 bilayered barrier system for through-Si-via process
Japanese Journal of Applied Physics, 54, 5S, 05EE02-1
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2015-05 |
Low-temperature deposition of reactively-sputtered SiNx films applicable to TSV process
IEEJ Transactions on Electronics, Information and Systems, 135, 7, 728
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2015-07 |
Characterization of low temperature SiNx films for 3D/2.5-IC TSV
IEEJ Transactions on Electronics, Information and Systems, 135, 7, 733
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2015-07 |
Room-temperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI
Japanese Journal of Applied Physics, 55, 2S, 02BC21-1
|
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2016-02 |
Barrier properties of ultrathin VN films of low resistivity and high density for Cu interconnects
Japanese Journal of Applied Physics, 55, 2S, 02BC10-1
|
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2016-02 |
Low-temperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics
Japanese Journal of Applied Physics, 55, 04EC05
|
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2016-04 |
Preparation of ultrathin TiNx films by radical assisted low temperature deposition and their barrier properties against Cu diffusion
Vacuum, 126, 10
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2016-04 |
Growth of <111>-oriented Cu layer on thin TaWN films
Japanese Journal of Applied Physics, 56, 07KC03
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2017-06 |
Relationship between TiN films with different orientations and their barrier properties
Japanese Journal of Applied Physics, 57, 07MB01
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2018-06 |
Characterization of TiN films sputter-deposited at low temperatures for Cu-through-silicon via
Japanese Journal of Applied Physics, 58, SBBC03
|
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2019-04 |
Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy
Japanese Journal of Applied Physics, 58, SBBC02
|
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2019-04 |
Cu(111) preferential orientation on thin HfN film as a diffusion barrier
Japanese Journal of Applied Physics, 58, SHHA01
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2019-07 |
XRD and EBSD analysis of Cu film on randomly oriented ZrNx film as the underlying materials
Japanese Journal of Applied Physics, 59, SLLD01-1
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2020-04 |
Structural analysis of TaWN ternary alloy film applicable to Cu orientation control
Japanese Journal of Applied Physics, 60, SBBC04
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2021-03 |
Al(111) orientation and thermal stability of the system using Al3Nb thin film
Japanese Journal of Applied Physics, 61, SC1088-1
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2022-05 |
Room-temperature deposition of nitride barrier by radical-assisted surface
reaction in LSI and/or 3D-LSI metallization
Japanese Journal of Applied Physics, 61, SJ0802-1
|
|
2022-08 |
International Conference Papers / Proceedings
| Title | Publish Date |
|---|---|
Preparation conditions of nano-crystalline ZrNx films by reactive sputtering
Advanced Metallization Conference 2012 : Asian Session, The Japan Society of Applied Physics, 東京
|
2012-10 |
Preparation of nanocrystalline HfNx films as a thin barrier for through Si via interconnects
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
|
2013-06 |
Characterization of TiHfN nitride composite films as a barrier between Cu plug and Si
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
|
2013-06 |
Characterization of SiNx film as insulating barrier applicable to TSV
Advanced Metallization Conference 2013 : Asian Session, The Japan Society of Applied Physics, 東京
|
2013-10 |
Thermal stability of bi-layered ZrN/Zr3N4 barrier in Cu/Si contact system
Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, Jpn. J. Appl. Phys., Tokyo
|
2014-10 |
Thermally and Structurally Stable Thin VN Barrier
for Cu Interconnects
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics
, Niigata
|
2015-06 |
Barrier Properties of HfNx Thin Films Formed
by Radical-Assisted Surface Reaction
Organic and Inorganic Electronic Materials and Related Nanotechnologies , The Japan Society of Applied Physics, Niigata
|
2015-06 |
Preparation of high performance SiNx films deposited by reactive sputtering and PECVD at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Sapporo
|
2015-09 |
The effect of the HfNx barrier thickness on the Cu grain orientation control
Solid State Devices and Materials, The Japan Society of Applied Physics, Tsukuba
|
2016-09 |
Barrier properties of TiHfN ternary alloy films against Cu diffusion in Cu/Si contact system
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2016-10 |
Cu grain orientation control on thin TaWN ternary alloy barrier
Advanced Metallization Conference 2016 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2016-10 |
Characterization of TiHfN ternary alloy films as a new barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, Sendai
|
2017-09 |
Relation between TiN films with different texture and its barrier properties
Advanced Metallization Conference 2017 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2017-10 |
Control of Cu(111) orientation on TaWN alloy barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
|
2018-09 |
Preparation of ZrOxNy film at low temperatures by reactive sputtering assisted by hot-wire
HWCVD10 Conference, The Japan Society of Applied Physics, Kitakyushu
|
2018-09 |
Characterization of TiN films sputter-deposited at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
|
2018-09 |
Mapping of Ni/SiNx/n-SiC Structure Using Scanning Internal Photoemission Microscopy
Solid State Devices and Materials, The Japan Society of Applied Physics, tokyo
|
2018-09 |
Cu(111) preferential orientation on thin HfNX films
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
|
2018-10 |
Preferential orientation of Cu(111) with large grain sizes on thin TiHfN barrier
Advanced Metallization Conference 2018 : Asian Session, The Japan Society of Applied Physics, Beijing
|
2018-10 |
固体の電気インピーダンス解析 ～エゾシカ肉の生体測定～
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
|
2018-11 |
薄いHfNx膜上でのCu膜の配向性評価
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
|
2018-11 |
極薄TaWNバリヤ上のCu(111)配向制御
Advanced Metallization Conference Satellite Workshop, The Japan Society of Applied Physics, tokyo
|
2018-11 |
Properties of barrierless Cu/ZrNx/Si structure deposited at room temperature
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
|
2019-09 |
Cu(111) preferential orientation on ZrNx films
Advanced Metallization Conference Plus 2019, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Formation of chemically inert interface between Al and Al3Nb thin films
Advanced Metallization Conference Plus 2019 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Cu(111) orientation control on thin TaWN alloy barrier
Advanced Metallization Conference Plus 2019 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Preparation of reactively sputtered ZrO2 films at low temperatures
International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics
|
2020-09 |
Low-temperature deposited SiNx films for TSV in 3D-LSI
International Conference on Solid State Devices and Materials, Japanese Journal of Applied Physics
|
2021-09 |
Preparation of Zr/ZrOx/Pt structure for forming free resistive random access memory
International Conference on Solid State Devices and Materials, Japanese Journal of Applied Physics
|
2021-09 |
Application of Al3Nb thin films for Al(111) orientation control
International Conference on Solid State Devices and Materials, Japanese Journal of Applied Physics
|
2021-09 |