Mayumi Takeyama

Publication (Academic Papers)

Scientific Papers

Title / Publisher   Publish Date
Thermal stability of ZrN barrier in W/ZrN/poly-Si gate electrode configuration
IEICE Trans. ELECTRON, E84-C, 5, 704
2001-05
High performance of thin nano-crystalline ZrN diffusion barriers in Cu/Si contact systems
Appl. Surf. Sci., 190, 1-4, 450
2002-06
Diffusion barrier properties of nano-crystalline TiZrN films in Cu/Si contact systems
Appl. Surf. Sci., 216, 181
2003-06
Thermal stability of W2N compound barrier in W/W2N/poly-Si gate electrode configuration
IEICE Trans. ELECTRON, E86-C, 11, 2332
2003-11
Spectroscopic ellipsometry of TaNx and VN films
Thin Solid Films, 455/456, 473
2004-07
Application of thin nanocrystalline VN film as a high-performance diffusion barrier between Cu and SiO2
J. Vac. Sci. Technol. B, B22, 5, 2542
2004-09
Formation of preferentially oriented Cu[111] layer on Nb[110] barrier on SiO2
Jpn. J. Appl. Phys., 43, 12B, L1565-L1568
2004-12
Diffusion-barrier properties of Ta1-xWx alloy films and silicidation-induced Cu penetration in Cu/Si contacts
J. Vac. Sci. Technol. B, B23, 1, 280
2005-03
Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
Jpn. J. Appl. Phys., 45, 12, 9172
2006-12
Application of extremely thin ZrN film as diffusion barrier between Cu and SiOC
Jpn. J. Appl. Phys., 47, 1, 620-624
2008-01
Evolution of microstructures in nanocrystalline VN barrier leading to failure in Cu/VN/SiO2/Si systems
49, 5, 05FA05
2010-05
Reactively sputtered nanocrysatlline ZrN film as extremely thin diffusion barrier between Cu and SiO2
49, 5, 05FA06
2010-05
Barrier properties of thin ZrNx films prepared by radical-assisted surface reaction
Jpn. J. Appl. Phys., 50, 5, 05EA07
2011-05
Atomic layer deposition of thin VNx fil from Tetrakis(Diethyl)AmidoVanadiun precursor
Jpn. J. Appl. Phys, 50, 5, 05EA06
2011-05
Oxidation Characteristics of Thin Al-Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu
Japanese Journal of Applied Physics, 51, 05EA06
2012-05
Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
Japanese Journal of Applied Physics, 53, 02BC04
2014-02
Preparation of nanocrystalline HfNx films as a thin barrier for through-Si via interconnects in three-dimensional integration
Japanese Journal of Applied Physics, 53, 02BC05
2014-02
Characterization of silicon nitride thin films deposited by reactive sputtering and plasma enhanced CVD at low temperatures
Jpn. J. Appl. Phys., 53, 05GE01
2014-05
Thermally stable ZrN/Zr3N4 bilayered barrier system for through-Si-via process
Jpn. J. Appl. Phys., 54, 5S, 05EE02
2015-05
Low-temperature deposition of reactively-sputtered SiNx films applicable to TSV process
IEEJ Transactions on Electronics, Infomation and Systems, 135, 7, 728
2015-07
Application of an Al-Nb alloy film to a metal capping layer on Cu
Jpn. J. Appl. Phys., 55, 2S, 02BC22
2016-02
Room-teperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI
Jpn. J. Appl. Phys., 55, 2S, 02BC21
2016-02
Barrier properties of ultrathin VN films of low reitivity and high density for Cu interconnects
Jpn. J. Appl. Phys., 55, 2S, 02BC10
2016-02
Preparation of ultrathin TiNx films by radical assisted low temperature deposition and their barrier properties against Cu diffusion
Vacuum, 126, 10
2016-04
Low-teperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics
Japanese Journal of Applied Physics, 55, 4S, 04EC05
2016-04
Growth of <111>-oriented Cu layer on thin TaWN films
Japanese Journal of Applied Physics, 56, 07KC03
2017-07
Relationship between TiN films with different orientations and their barrier properties
Japanese Journal of Applied Physics, 57, 07MB01
2018-06
Characterization of TiN films sputter-deposited at low temperatures for Cu-through-silicon via
Japanese Journal of Applied Physics, 58, SBBC03
2019-04
Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy
Japanese Journal of Applied Physics, 58, SBBC02
2019-04
Cu(111) preferential orientation on thin HfN film as a diffusion barrier
Japanese Journal of Applied Physics, 58, S7, SHHA01
2019-07

International Conference Papers / Proceedings

Title Publish Date
Atomic layer deposition of thin VNx film from TDEAV precursor
Advanced Metallization Conference 2010: 20th Asian Session, Japan Society of Applied Physics, Tokyo
2010-10
Oxidation caracteristic of thin Al-Mo alloy films as a metal capping layer on Cu
Advanced Metallization Conference 2011: 21st Asian Session, The Japan Society of Applied Physics, Tokyo
2011-09
Preparation conditions of nano-crystalline ZrNx films by reactive sputtering
Advanced Metallinzation Conference 2012: 22nd Asian Session, The Japan Society of Applied Physics, Tokyo
2012-10
Preparation of nanocrystalline HfNx films as a thin barrier for through Si via interconnects
The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
2013-06
Characterization of TiHfN nitride composite films as a barrier between Cu plug and Si
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
2013-06
Characterization of SiNx film as insulating barrier applicable to TSV
Advanced Metallization Conference 2013 : Asian Session, The Japan Society of Applied Physics, 東京
2013-10
Thermal stability of bi-layered ZrN/Zr3N4 barrier in Cu/Si contact system
Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, The Japan Society of Applied Physics, Tokyo
2014-10
Oxidation characteristics of Al-Nb alloy film as capping layer on Cu
Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, Niigata
2015-06
Barrier properties of HfNx thin films formed by radical-assisted surface reaction
Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, Niigata
2015-06
Thermally and structurally stable thin VN barrier for Cu interconnects
Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, Niigata
2015-06
Preparation of high performance SiNx films deposited by reactive sputtering and PECVD at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Sapporo
2015-09
The effect of the HfNx barrier thickness on the Cu grain orientation control
Solid State Devices and Materials, The Japan Society of Applied Physcis, Tsukuba
2016-09
Barrier properties of TiHfN ternary alloy films against Cu diffusion in Cu/Si contact system
Advanced Metallization Conference 2016, The Japan Society of Applied Physics, Tokyo
2016-10
Cu grain orientation control on thin TaWN ternary alloy barrier
Advanced Metallization Conference 2016, The Japan Society of Applied Physics, Tokyo
2016-10
Characterization of TiHfN ternary alloy films as a new barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, Sendai
2017-09
Relation between TiN films with different texture and its barrier properties
Advanced Metallization Conference 2017 : Asian Session, The Japan Society of Applied Physics, Tokyo
2017-10
The choice of the diffusion barrier material in Al and Cu metallization
The 2nd International Workshop “Materials for Advanced Interconnects and Packaging” , North China University of Technology (NCUT,Beijing),Institute of Microelectronics of China Academy of Sciences (IME CAS, Beijing), China Agrochemical University (CAU,Beijing),Tianjin University (TU, Tianjin), Fudan University (FU, Shanghai)., Beijing
2017-10
Mapping of Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
2018-09
Properties of barrierless Cu/ZrNx/Si structure deposited at room temperature
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
2019-09
Cu(111) orientation control on thin TaWN alloy barrier
Advanced Metallization Conference Plus 2019, The Japan Society of Applied Physics, Tokyo
2019-10
Formation of chemically inert interface between Al and Al3Nb thin films
Advanced Metallization Conference plus 2019, The Japan Society of Applied Physics, Tokyo
2019-10
Cu(111) preferential orientation on ZrNx films
Advanced Metallization Conference plus 2019, The Japan Society of Applied Physics, Tokyo
2019-10
Barrier properties of thin TaWN films in Cu(111)/TaWN/Si systems
International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, all virtual
2020-09
Preparation of reactively sputtered ZrO2 films at low temperatures
International Conferences on Solid State Devices and Materials, The Japan Society of Applied Physics, オンライン
2020-09

Lecture Presentations

Title Publish Date
Electrical characteristic of meat in Okhotsk area
北見市
2017-07
Low temperature deposition of TiNx film by reactive sputtering
北見市
2017-07
How to choose diffusion barrier materials for LSI metallization
The Institute of Electronics, Information and Communication Engineers, 八王子市
2018-03
Evaluation of freshness of the Ezoshika meat
東京都
2018-03
Relationship between taste evaluation of Ezoshika meat and electrical mesurement
弘前
2018-08
Electrical properties of Ezoshika meat
札幌
2018-09
A Case of Taste Evaluation Utilizing Electrical Characteristics
2018 Microwave Workshops and Exhibition, Yokohama
2018-11
Thermal stability of TiNx film obtained by low temperature process
長岡
2018-11
Bioelectrical impedance mesurement and simulation analysis of Ezoshika meat
東京
2019-03
Awards
2019 ADMETA Poster Award 2019
社会活動
2018.12~ Advanced Metallization Conference Vice Chair
2017.12~2018.12 Advanced Metallization Conference Program Comittee Member
2017.10~2019.10 Solid State Devices and Mateirals (SSDM) Area 3 Chair
2019.11~ Solid State Devices and Mateirals (SSDM) Area 3 Vice Chair