Mayumi Takeyama
Publication (Academic Papers)
Scientific Papers
| Title / Publisher | Publish Date | |
|---|---|---|
Thermal stability of ZrN barrier in W/ZrN/poly-Si gate electrode configuration
IEICE Trans. ELECTRON, E84-C, 5, 704
|
2001-05 | |
High performance of thin nano-crystalline ZrN diffusion barriers in Cu/Si contact systems
Appl. Surf. Sci., 190, 1-4, 450
|
2002-06 | |
Diffusion barrier properties of nano-crystalline TiZrN films in Cu/Si contact systems
Appl. Surf. Sci., 216, 181
|
2003-06 | |
Thermal stability of W2N compound barrier in W/W2N/poly-Si gate electrode configuration
IEICE Trans. ELECTRON, E86-C, 11, 2332
|
2003-11 | |
Spectroscopic ellipsometry of TaNx and VN films
Thin Solid Films, 455/456, 473
|
2004-07 | |
Application of thin nanocrystalline VN film as a high-performance diffusion barrier between Cu and SiO2
J. Vac. Sci. Technol. B, B22, 5, 2542
|
2004-09 | |
Formation of preferentially oriented Cu[111] layer on Nb[110] barrier on SiO2
Jpn. J. Appl. Phys., 43, 12B, L1565-L1568
|
2004-12 | |
Diffusion-barrier properties of Ta1-xWx alloy films and silicidation-induced Cu penetration in Cu/Si contacts
J. Vac. Sci. Technol. B, B23, 1, 280
|
2005-03 | |
Preferentially Oriented Cu[111] Layer Formed on Thin Nb Barrier on SiO2
Jpn. J. Appl. Phys., 45, 12, 9172
|
2006-12 | |
Application of extremely thin ZrN film as diffusion barrier between Cu and SiOC
Jpn. J. Appl. Phys., 47, 1, 620-624
|
2008-01 | |
Evolution of microstructures in nanocrystalline VN barrier leading to failure in Cu/VN/SiO2/Si systems
49, 5, 05FA05
|
2010-05 | |
Reactively sputtered nanocrysatlline ZrN film as extremely thin diffusion barrier between Cu and SiO2
49, 5, 05FA06
|
2010-05 | |
Atomic layer deposition of thin VNx fil from Tetrakis(Diethyl)AmidoVanadiun precursor
Jpn. J. Appl. Phys, 50, 5, 05EA06
|
2011-05 | |
Barrier properties of thin ZrNx films prepared by radical-assisted surface reaction
Jpn. J. Appl. Phys., 50, 5, 05EA07
|
2011-05 | |
Oxidation Characteristics of Thin Al-Mo Alloy Films with Various Compositions as Metal Capping Layer on Cu
Japanese Journal of Applied Physics, 51, 05EA06
|
2012-05 | |
Preparation of nanocrystalline HfNx films as a thin barrier for through-Si via interconnects in three-dimensional integration
Japanese Journal of Applied Physics, 53, 02BC05
|
2014-02 | |
Characterization of TiHfN ternary alloy films as a barrier between Cu plug and Si
Japanese Journal of Applied Physics, 53, 02BC04
|
2014-02 | |
Characterization of silicon nitride thin films deposited by reactive sputtering and plasma enhanced CVD at low temperatures
Jpn. J. Appl. Phys., 53, 05GE01
|
2014-05 | |
Thermally stable ZrN/Zr3N4 bilayered barrier system for through-Si-via process
Jpn. J. Appl. Phys., 54, 5S, 05EE02
|
 |
2015-05 |
Low-temperature deposition of reactively-sputtered SiNx films applicable to TSV process
IEEJ Transactions on Electronics, Infomation and Systems, 135, 7, 728
|
|
2015-07 |
Application of an Al-Nb alloy film to a metal capping layer on Cu
Jpn. J. Appl. Phys., 55, 2S, 02BC22
|
|
2016-02 |
Room-teperature deposition of HfNx barrier by radical-assisted surface reaction for through-silicon-via in three-dimensional LSI
Jpn. J. Appl. Phys., 55, 2S, 02BC21
|
|
2016-02 |
Barrier properties of ultrathin VN films of low reitivity and high density for Cu interconnects
Jpn. J. Appl. Phys., 55, 2S, 02BC10
|
|
2016-02 |
Preparation of ultrathin TiNx films by radical assisted low temperature deposition and their barrier properties against Cu diffusion
Vacuum, 126, 10
|
|
2016-04 |
Low-teperature-deposited insulating films of silicon nitride by reactive sputtering and plasma-enhanced CVD: Comparison of characteristics
Japanese Journal of Applied Physics, 55, 4S, 04EC05
|
|
2016-04 |
Growth of <111>-oriented Cu layer on thin TaWN films
Japanese Journal of Applied Physics, 56, 07KC03
|
|
2017-07 |
Relationship between TiN films with different orientations and their barrier properties
Japanese Journal of Applied Physics, 57, 07MB01
|
|
2018-06 |
Mapping of a Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy
Japanese Journal of Applied Physics, 58, SBBC02
|
|
2019-04 |
Characterization of TiN films sputter-deposited at low temperatures for Cu-through-silicon via
Japanese Journal of Applied Physics, 58, SBBC03
|
|
2019-04 |
Cu(111) preferential orientation on thin HfN film as a diffusion barrier
Japanese Journal of Applied Physics, 58, S7, SHHA01
|
|
2019-07 |
XRD and EBSD analysis of Cu film on randomly oriented ZrNx film as the underlying materials
Japanese Journal of Applied Physics, 59, SLLD01-1
|
|
2020-04 |
Structural analysis of TaWN ternary alloy film applicable to Cu orientation control
Japanese Journal of Applied Physics, SBBC04
|
|
2021-03 |
Al(111) orientation and thermal stability of the system using Al3Nb thin film
Jpn. J. Appl. Phys., 61, SC1088-1
|
|
2022-05 |
Room-temperature deposition of nitride barrier by radical-assisted surface reaction in LSI and/or 3D-LSI metallization
Jpn. J. Appl. Phys., 61, SJ0802-1
|
|
2022-08 |
Fundamental evaluation of orientation and grain size of Cu film in Cu/TaWN/SiO2/Si system
Japanese Journal of Applied Physics, 62, SH8003
|
2023-06 | |
Agricultural Support from an Engineering Standpoint
J106-C, 6, 242-248
|
|
2023-06 |
International Conference Papers / Proceedings
| Title | Publish Date |
|---|---|
Atomic layer deposition of thin VNx film from TDEAV precursor
Advanced Metallization Conference 2010: 20th Asian Session, Japan Society of Applied Physics, Tokyo
|
2010-10 |
Oxidation caracteristic of thin Al-Mo alloy films as a metal capping layer on Cu
Advanced Metallization Conference 2011: 21st Asian Session, The Japan Society of Applied Physics, Tokyo
|
2011-09 |
Preparation conditions of nano-crystalline ZrNx films by reactive sputtering
Advanced Metallinzation Conference 2012: 22nd Asian Session, The Japan Society of Applied Physics, Tokyo
|
2012-10 |
Preparation of nanocrystalline HfNx films as a thin barrier for through Si via interconnects
The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
|
2013-06 |
Characterization of TiHfN nitride composite films as a barrier between Cu plug and Si
4nd International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, 金沢
|
2013-06 |
Characterization of SiNx film as insulating barrier applicable to TSV
Advanced Metallization Conference 2013 : Asian Session, The Japan Society of Applied Physics, 東京
|
2013-10 |
Thermal stability of bi-layered ZrN/Zr3N4 barrier in Cu/Si contact system
Advanced Metallization Conference 2014: 24th Asian Session IWAPS Joint Conference, The Japan Society of Applied Physics, Tokyo
|
2014-10 |
Oxidation characteristics of Al-Nb alloy film as capping layer on Cu
Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, Niigata
|
2015-06 |
Barrier properties of HfNx thin films formed by radical-assisted surface reaction
Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, Niigata
|
2015-06 |
Thermally and structurally stable thin VN barrier for Cu interconnects
Organic and Inorganic Electronic Materials and Related Nanotechnologies, The Japan Society of Applied Physics, Niigata
|
2015-06 |
Preparation of high performance SiNx films deposited by reactive sputtering and PECVD at low temperatures
Solid State Devices and Materials, The Japan Society of Applied Physics, Sapporo
|
2015-09 |
The effect of the HfNx barrier thickness on the Cu grain orientation control
Solid State Devices and Materials, The Japan Society of Applied Physcis, Tsukuba
|
2016-09 |
Barrier properties of TiHfN ternary alloy films against Cu diffusion in Cu/Si contact system
Advanced Metallization Conference 2016, The Japan Society of Applied Physics, Tokyo
|
2016-10 |
Cu grain orientation control on thin TaWN ternary alloy barrier
Advanced Metallization Conference 2016, The Japan Society of Applied Physics, Tokyo
|
2016-10 |
Characterization of TiHfN ternary alloy films as a new barrier
Solid State Devices and Materials, The Japan Society of Applied Physics, Sendai
|
2017-09 |
Relation between TiN films with different texture and its barrier properties
Advanced Metallization Conference 2017 : Asian Session, The Japan Society of Applied Physics, Tokyo
|
2017-10 |
The choice of the diffusion barrier material in Al and Cu metallization
The 2nd International Workshop “Materials for
Advanced Interconnects and Packaging”
, North China University of Technology (NCUT,Beijing),Institute of Microelectronics of China Academy of Sciences (IME CAS, Beijing),
China Agrochemical University (CAU,Beijing),Tianjin University (TU, Tianjin),
Fudan University (FU, Shanghai)., Beijing
|
2017-10 |
Mapping of Ni/SiNx/n-SiC structure using scanning internal photoemission microscopy
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
|
2018-09 |
Properties of barrierless Cu/ZrNx/Si structure deposited at room temperature
Solid State Devices and Materials, The Japan Society of Applied Physics, Tokyo
|
2019-09 |
Cu(111) orientation control on thin TaWN alloy barrier
Advanced Metallization Conference Plus 2019, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Formation of chemically inert interface between Al and Al3Nb thin films
Advanced Metallization Conference plus 2019, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Cu(111) preferential orientation on ZrNx films
Advanced Metallization Conference plus 2019, The Japan Society of Applied Physics, Tokyo
|
2019-10 |
Barrier properties of thin TaWN films in Cu(111)/TaWN/Si systems
International Conference on Solid State Devices and Materials, The Japan Society of Applied Physics, all virtual
|
2020-09 |
Preparation of reactively sputtered ZrO2 films at low temperatures
International Conferences on Solid State Devices and Materials, The Japan Society of Applied Physics, オンライン
|
2020-09 |
Lecture Presentations
| Title | Publish Date |
|---|---|
Electrical characteristic of meat in Okhotsk area
北見市
|
2017-07 |
Low temperature deposition of TiNx film by reactive sputtering
北見市
|
2017-07 |
Evaluation of freshness of the Ezoshika meat
東京都
|
2018-03 |
How to choose diffusion barrier materials for LSI metallization
The Institute of Electronics, Information and Communication Engineers, 八王子市
|
2018-03 |
Relationship between taste evaluation of Ezoshika meat and electrical mesurement
弘前
|
2018-08 |
Electrical properties of Ezoshika meat
札幌
|
2018-09 |
Thermal stability of TiNx film obtained by low temperature process
長岡
|
2018-11 |
A Case of Taste Evaluation Utilizing Electrical Characteristics
2018 Microwave Workshops and Exhibition, Yokohama
|
2018-11 |
Bioelectrical impedance mesurement and simulation analysis of Ezoshika meat
東京
|
2019-03 |
Low temperature deposition of extremely thin barrier for metallization technology
2021 MRS spring meeting, オンライン
|
2021-04 |
Awards
| 2019 | ADMETA Poster Award 2019 |
社会活動
| 2018.12～ | Advanced Metallization Conference Vice Chair |
| 2017.12～2018.12 | Advanced Metallization Conference Program Comittee Member |
| 2017.10~2019.10 | Solid State Devices and Mateirals (SSDM) Area 3 Chair |
| 2019.11~ | Solid State Devices and Mateirals (SSDM) Area 3 Vice Chair |